TC1501N rev4_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 1 / 4 1w high linearity and high efficiency gaas power fets features 1w typical power at 6 ghz photo enlargement linear power gain: g l = 12 db typical at 6 ghz high linearity: ip3 = 40 dbm typical at 6 ghz high power added efficiency: nominal pae of 43% at 6 ghz non-via hole source for self-bias application suitable for high reliability application breakdown voltage: bv dgo 15 v lg = 0.35 m, wg = 2.4 mm tight vp ranges control high rf input power handling capability 100 % dc tested description the TC1501N is a gaas pseudomorphic high electron mobility transistor (phemt) which has high linearity and high power added efficiency. the device is processed without via-holes for self-bias applications. the short gate length characteristic enables the device to be used in circuits up to 20ghz. all devices are 100% dc tested to assure consistent quality. bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. backside gold plating is compatible with standard ausn die-attach. typical application include commercial and military high performance power amplifiers. electrical specifications (t a =25 c) symbol conditions min typ max unit p 1db output power at 1db gain compression point , f = 6 ghz v ds = 8 v, i ds = 240 ma 29.5 30 dbm g l linear power gain, f = 6 ghz v ds = 8 v, i ds = 240 ma 12 db ip3 intercept point of the 3 rd -order intermodulation, f = 6 ghz v ds = 8 v, i ds = 240 ma,*p scl = 17 dbm 40 dbm pae power added efficiency at 1db compression power, f = 6 ghz 43 % i dss saturated drain-source current at v ds = 2 v, v gs = 0 v 600 ma g m transconductance at v ds = 2 v, v gs = 0 v 400 ms v p pinch-off voltage at v ds = 2 v, i d = 4.8 ma -1.7** volts bv dgo drain-gate breakdown voltage at i dgo =1.2 ma 15 18 volts r th thermal resistance 15 c/w note: * p scl : output power of single carrier level. * for the tight control of the pinch-off voltage . TC1501N?s are divided into 3 groups: (1) TC1501Np1519 : vp = -1.5v to -1.9v (2) TC1501Np1620 : vp = -1.6v to -2.0v (3) TC1501Np1721 : vp = -1.7v to -2.1v in addition, the customers may specify their requirements.
TC1501N rev4_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 2 / 4 absolute maximum ratings (t a =25 c) symbol parameter rating v ds drain-source voltage 12 v v gs gate-source voltage -5 v i ds drain current i dss p in rf input power, cw 28 dbm p t continuous dissipation 3.8 w t ch channel temperature 175 c t stg storage temperature - 65 c to +175 c chip dimensions s g g s s d d 600 12 470 12 units: micrometers chip thickness: 50 gate pad: 79 x 59.5 drain pad: 86.0 x 76.0 source pad: 80 x 86 chip handling die attachment: conductive epoxy or eutectic die attach is recommended. eutectic die attach can be accomplished with au-sn (80%au-20%sn) perform at stage temperature: 290 c 5 c; handling tool: tweezers; time: less than 1min. wire bonding: the recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. stage temperature: 220 c to 250 c; bond tip temperature: 150 c; bond force: 20 to 30 gms depending on size of wire and bond tip temperature. handling precautions: the user must operate in a clean, dry environment. care should be exercised during handling avoid damage to the devices. electrostatic discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. the static discharge must be less than 300v. typical scattering parameters (t a =25 c ) v ds = 8 v, i ds = 240 ma
TC1501N rev4_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 3 / 4 frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 2 0.8590 -147.25 5.2262 94.57 0.0559 21.04 0.3393 -135.53 3 0.8534 -158.90 3.5426 84.03 0.0568 18.84 0.3577 -141.51 4 0.8524 -165.26 2.6620 76.08 0.0569 19.35 0.3819 -143.44 5 0.8529 -169.41 2.1223 69.32 0.0570 21.16 0.4095 -144.26 6 0.8541 -172.46 1.7577 63.27 0.0571 23.76 0.4390 -144.88 7 0.8558 -174.86 1.4947 57.72 0.0575 26.90 0.4691 -145.59 8 0.8577 -176.88 1.2959 52.59 0.0583 30.37 0.4988 -146.47 9 0.8597 -178.64 1.1403 47.83 0.0595 34.03 0.5276 -147.50 10 0.8618 179.77 1.0153 43.40 0.0613 37.71 0.5550 -148.66 11 0.8638 178.31 0.9127 39.29 0.0636 41.27 0.5809 -149.92 12 0.8658 176.94 0.8269 35.47 0.0663 44.62 0.6050 -151.24 13 0.8677 175.63 0.7542 31.93 0.0696 47.68 0.6275 -152.59 14 0.8695 174.38 0.6918 28.67 0.0733 50.41 0.6483 -153.96 15 0.8712 173.18 0.6377 25.67 0.0773 52.81 0.6674 -155.33 16 0.8728 172.00 0.5903 22.91 0.0817 54.89 0.6850 -156.69 17 0.8743 170.86 0.5485 20.39 0.0864 56.65 0.7012 -158.02 18 0.8757 169.74 0.5113 18.11 0.0912 58.13 0.7161 -159.34 * the data does not include gate, drain and source bond wires. small signal model, v ds = 8 v, i ds = 240 ma 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s11 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 0.1 0.01 per div s12 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 6 2 per div s21 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s22
TC1501N rev4_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 4 / 4 cgs cgd cds rg rd rdb ris rs id lg ld ls cbs rid schemati cgs cgd cds rg rd rds ri rs gm t lg ld ls parameters lg 0.0377 nh rs 0.965 ohm rg 0.69 ohm ls 0.0254 nh cgs 3.6 pf cds 0.439 pf ri 1.18 ohm rds 73.1 ohm cgd 0.213 pf rd 0.937 ohm gm 407.7 ms ld 0.008 nh t 3.9 psec large signal model, v ds = 8 v, i ds = 240 ma schemati tom2 model parameters vto -2.364 v vmax 0.5 v alpha 10.67 cgd 0.213 pf beta 0.543 cgs 6.712 pf gamma 0.0195 cds 0.444 pf delta 0.0848 ris 1.288 ohm q 0.83 rid 0.0001 ohm ng 0.1 vbr 15 v nd 0.01 rdb 54.633 ohm tau 3.9 ps cbs 14.433 pf rg 1.071 ohm tnom 25 c rd 0.92 ohm ls 0.0254 nh rs 0.965 ohm lg 0.0377 nh is 1e-11 ma ld 0.0078 nh n 1 afac 1 vbi 1 v nfing 1 vdelta 0.2 v
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